BUK652R0-30C,127 NXP Semiconductors, BUK652R0-30C,127 Datasheet - Page 9

• Manufacturer Part Number: BUK652R0-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK652R0-30C,127

• Input Capacitance (ciss) @ Vds: 14964pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 229nC @ 10V
• Power - Max: 306W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK652R0-30C
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
14V
60
120
(A)
I
S
100
V
80
60
40
20
180
DS
0
0
= 24V
All information provided in this document is subject to legal disclaimers.
Q
003aae241
G
(nC)
Tj = 175 °C
Rev. 01 — 6 September 2010
240
0.5
Fig 14. Input, output and reverse transfer capacitance
Tj = 25 °C
(pF)
C
1
10
10
10
10
N-channel TrenchMOS intermediate level FET
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
SD
-1
003a a e 243
(V)
1.5
1
BUK652R0-30C
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aae009
C
C
C
(V)
iss
oss
rss
10
2
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