BUK652R0-30C,127 NXP Semiconductors, BUK652R0-30C,127 Datasheet - Page 9
![MOSFET N-CH TRENCH SOT78A](/photos/16/7/160729/to220ab_sml.jpg)
BUK652R0-30C,127
Manufacturer Part Number
BUK652R0-30C,127
Description
MOSFET N-CH TRENCH SOT78A
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK652R0-30C127.pdf
(15 pages)
Specifications of BUK652R0-30C,127
Input Capacitance (ciss) @ Vds
14964pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
229nC @ 10V
Power - Max
306W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
BUK652R0-30C
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
14V
60
120
(A)
I
S
100
V
80
60
40
20
180
DS
0
0
= 24V
All information provided in this document is subject to legal disclaimers.
Q
003aae241
G
(nC)
Tj = 175 °C
Rev. 01 — 6 September 2010
240
0.5
Fig 14. Input, output and reverse transfer capacitance
Tj = 25 °C
(pF)
C
1
10
10
10
10
N-channel TrenchMOS intermediate level FET
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
SD
-1
003a a e 243
(V)
1.5
1
BUK652R0-30C
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aae009
C
C
C
(V)
iss
oss
rss
10
2
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