BUK661R9-40C,118 NXP Semiconductors, BUK661R9-40C,118 Datasheet

MOSFET N-CH TRENCH D2PACK

BUK661R9-40C,118

Manufacturer Part Number
BUK661R9-40C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK661R9-40C118.pdf (15 pages)

Specifications of BUK661R9-40C,118

Input Capacitance (ciss) @ Vds
15100pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 18 August 2010
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
1.6
Max Unit
40
120
306
1.9
V
A
W
mΩ

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BUK661R9-40C,118 Summary of contents

Page 1

... BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 18 August 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... V; see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol G ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C Min Max - 40 [1] -20 20 [2] -16 16 [3] Figure 1 - 120 [3] Figure 1 - 120 - 1107 - 306 -55 175 ...

Page 4

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C 0 50 100 150 T =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK661R9-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C Min Typ Max - - 0. 003aae269 t p δ = ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...

Page 7

... I (A) D Fig 6. 003aae248 3.6 3.4 3.3 V (V) = 3.2 GS 0.6 0 (V) DS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C N-channel TrenchMOS intermediate level FET Min Typ - 0 127 8 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values. ...

Page 8

... I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C N-channel TrenchMOS intermediate level FET 4 V GS(th) (V) 3 max @1mA 2 typ @1mA min @2.5mA junction temperature 2 ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C N-channel TrenchMOS intermediate level FET 10 GS (V) 8 14V 100 200 charge; typical values 003aae255 = 25 ° ...

Page 10

... Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK661R9-40C Product data sheet N-channel TrenchMOS intermediate level FET (pF All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C 003aae252 C iss C oss C rss (V) DS © NXP B.V. 2010. All rights reserved ...

Page 11

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK661R9-40C v.1 20100818 BUK661R9-40C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 ...

Page 13

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 18 August 2010 BUK661R9-40C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: BUK661R9-40C ...

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