BUK6E2R0-30C,127 NXP Semiconductors, BUK6E2R0-30C,127 Datasheet

BUK6E2R0-30C,127

Manufacturer Part Number

BUK6E2R0-30C,127

Description

MOSFET N-CH TRENCH I2PACK

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK6E2R0-30C127.pdf (15 pages)

Specifications of BUK6E2R0-30C,127

Input Capacitance (ciss) @ Vds

14964pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2.2 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

2.8V @ 1mA

Gate Charge (qg) @ Vgs

229nC @ 10V

Power - Max

306W

Mounting Type

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

120 A

Power Dissipation

306 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free by exemption / RoHS compliant by exemption

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

Table 1.

[1]

Symbol

Static characteristics

Avalanche ruggedness



tot

DS(AL)S

DSon

BUK6E2R0-30C

N-channel TrenchMOS intermediate level FET

Rev. 02 — 7 September 2010

AEC Q101 compliant

Suitable for intermediate level gate

drive sources

12 V Automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoid control

Continuous current is limited by package.

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state

resistance

non-repetitive

drain-source

avalanche energy

Conditions

see

j(init)

≥ 25 °C; T

= 25 °C; see

= 120 A; V

Figure 1

= 25 °C; see

= 10 V; T

= 10 V; I

= 50 Ω; V

= 25 °C; unclamped

sup

≤ 175 °C

= 25 A;

Figure 16

≤ 30 V;

= 25 °C;

= 10 V;

Figure 2



Suitable for thermally demanding

environments due to 175 °C rating

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching

[1]

Min

Product data sheet

Typ

1.9

Max Unit

120

306

2.2

1.7

mΩ

Related parts for BUK6E2R0-30C,127

BUK6E2R0-30C,127 Summary of contents

Page 1

... BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 7 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... Product data sheet N-channel TrenchMOS intermediate level FET Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C Graphic symbol mbb076 Version SOT226 © NXP B.V. 2010. All rights reserved ...

Page 3

... Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C Min Max - 30 [1][2] -16 16 [3][4] -20 20 [5] Figure 1 - 120 [5] Figure 1 - 120 - 1082 - 306 ...

Page 4

... P der (%) 150 200 T (°C) mb Fig DSon 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6E2R0-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C Min Typ Max - - 0. 003aae269 t p δ = ...

Page 6

... Figure Ω Ω R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...

Page 7

... (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C Min Typ Max - 0.8 1 138 - 003a a e 236 = 25 °C = 175 ° ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03aa27 120 180 ( ° Fig 12. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C N-channel TrenchMOS intermediate level FET 4 3 max @1mA 2 typ @1mA min @2.5mA 1 0 -60 ...

Page 9

... Fig 14. Input, output and reverse transfer capacitance 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C N-channel TrenchMOS intermediate level FET function of drain-source voltage; typical values 001aal534 = 25 °C j 0.9 1.2 V (V) ...

Page 10

... Fig 16. Drain-source on-state resistance as a function of drain current; typical values BUK6E2R0-30C Product data sheet 10 R DSon (mΩ) V ( All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C N-channel TrenchMOS intermediate level FET 003aae238 3 100 I (A) D © NXP B.V. 2010. All rights reserved ...

Page 11

... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C N-channel TrenchMOS intermediate level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6E2R0-30C v.2 20100907 • Modifications: Various changes to content. BUK6E2R0-30C v.1 20100824 BUK6E2R0-30C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers ...

Page 13

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 September 2010 BUK6E2R0-30C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 September 2010 Document identifier: BUK6E2R0-30C ...

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