IRF9332TRPBF International Rectifier, IRF9332TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9332TRPBF
• Description: MOSFET P-CH 30V 9.8A 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9332TRPBF

• Input Capacitance (ciss) @ Vds: 1270pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 9.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.8A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 28.1 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 9.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
1.0
10
10
8
6
4
2
0
0.001
Fig 9. Maximum Drain Current vs.
0.3
0.01
25
100
0.1
10
1E-006
1
T J = 150°C
-V SD , Source-to-Drain Voltage (V)
Ambient Temperature
0.5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T A , Ambient Temperature (°C)
50
D = 0.50
0.02
0.05
0.01
0.20
0.10
1E-005
0.7
75
SINGLE PULSE
( THERMAL RESPONSE )
T J = 25°C
0.9
100
0.0001
V GS = 0V
1.1
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
1.3
0.01
1000
0.01
Fig 10. Threshold Voltage vs. Temperature
100
0.1
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1
Fig 8. Maximum Safe Operating Area
0.01
-75 -50 -25
0.1
T A = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-V DS , Drain-to-Source Voltage (V)
0.1
I D = -25µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
DC
T J , Temperature ( °C )
0
1
1
25
50
10
10
75 100 125 150
100µsec
10msec
1msec
100
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100
1000