IRF9332TRPBF International Rectifier, IRF9332TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9332TRPBF
• Description: MOSFET P-CH 30V 9.8A 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9332TRPBF

• Input Capacitance (ciss) @ Vds: 1270pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 9.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.8A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 28.1 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 9.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 18a. Unclamped Inductive Test Circuit
6
Fig 17a. Gate Charge Test Circuit
0
R
-V
-20V
G
V DS
GS
Fig 19a. Switching Time Test Circuit
t p
≤ 0.1 %
≤ 1
I AS
20K
1K
D.U.T
0.01 Ω
L
S
S
DRIVER
DUT
L
15V
+
V DD
-
A
VCC
Id
Fig 17b. Gate Charge Waveform
V
10%
90%
V
Fig 18b. Unclamped Inductive Waveforms
GS
DS
Vgs
Fig 19b. Switching Time Waveforms
I
AS
t
d(on)
Qgodr
t
r
t p
Qgd
V
t
Qgs2
(BR)DSS
d(off)
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Vgs(th)
Vds
Qgs1
t
f