AUIRLR024N International Rectifier, AUIRLR024N Datasheet - Page 6

• Manufacturer Part Number: AUIRLR024N
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR024N

• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 45W
• Operating: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Fig 9. Maximum Drain Current Vs.
20
15
10
5
0
25
0.01
0.1
10
0.00001
1
Case Temperature
D = 0.50
50
T , Case Temperature ( C)
0.05
0.20
0.10
0.02
0.01
C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
75
SINGLE PULSE
100
0.0001
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
0.01
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
Notes:
1. Duty factor D = t / t
2. Peak T = P
t
d(on)
J
≤ 0.1 %
≤ 1
DM
t
r
x Z
0.1
1
thJC
2
P
DM
+ T
C
t
1
t 2
t
d(off)
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t
f
+
-
1
A