AUIRLR024N International Rectifier, AUIRLR024N Datasheet - Page 7

• Manufacturer Part Number: AUIRLR024N
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR024N

• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 45W
• Operating: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
I
AS
V
G
R G
20V
Q
V DS
GS
t p
t p
I AS
D.U.T
Charge
Q
Q
0.01 Ω
L
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
140
120
100
80
60
40
20
Fig 12c. Maximum Avalanche Energy
0
25
V
Fig 13b. Gate Charge Test Circuit
DD
Starting T , Junction Temperature (°C)
12V
V
= 25V
GS
50
Same Type as D.U.T.
Vs. Drain Current
Current Regulator
.2µF
J
75
50KΩ
3mA
Current Sampling Resistors
.3µF
100
I
G
125
TOP
BOTTOM
D.U.T.
I
D
150
+
-
7.8A
4.5A
11A
V
I
D
DS
175
A
7