IRFH5204TR2PBF International Rectifier, IRFH5204TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5204TR2PBF
• Description: MOSFET N-CH 40V 22A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5204TR2PBF

• Input Capacitance (ciss) @ Vds: 2460pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN Exposed Pad
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 105 W
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
125
100
0.1
10
75
50
25
Fig 9. Maximum Drain Current Vs.
1
0
0.001
0.2
25
0.01
Case (Bottom) Temperature
0.1
10
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
T J = 150°C
D = 0.50
0.6
0.20
0.10
0.05
0.02
0.01
75
0.8
T J = 25°C
1E-005
Limited By Package
1.0
SINGLE PULSE
( THERMAL RESPONSE )
100
1.2
V GS = 0V
125
1.4
t 1 , Rectangular Pulse Duration (sec)
150
1.6
0.0001
0.001
1000
Fig 10. Threshold Voltage Vs. Temperature
100
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
1
0.10
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
ID = 1.0mA
ID = 500µA
ID = 150µA
ID = 100µA
OPERATION IN THIS AREA LIMITED BY RDS(on)
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
0.01
1
0
25
10msec
50
100µsec
10
75 100 125 150
1msec
www.irf.com
0.1
100