IRFH5204TR2PBF International Rectifier, IRFH5204TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5204TR2PBF
• Description: MOSFET N-CH 40V 22A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5204TR2PBF

• Input Capacitance (ciss) @ Vds: 2460pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN Exposed Pad
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 105 W
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14a. Unclamped Inductive Test Circuit
12
10
Fig 12. On-Resistance vs. Gate Voltage
8
6
4
2
0
Fig 15a. Switching Time Test Circuit
4
R G
20V
6
V GS, Gate -to -Source Voltage (V)
V DS
t p
8
≤ 0.1
≤ 1
I AS
D.U.T
10
0.01 Ω
L
12
T J = 25°C
14
T J = 125°C
15V
16
I D = 50A
DRIVER
18
+
-
+
-
V DD
20
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
450
400
350
300
250
200
150
100
50
Fig 14b. Unclamped Inductive Waveforms
0
90%
V
25
10%
V
I
DS
AS
GS
Starting T J , Junction Temperature (°C)
Fig 15b. Switching Time Waveforms
50
t
d(on)
t
75
t p
r
TOP
BOTTOM 50A
100
t
d(off)
V
(BR)DSS
16A
125
I D
6.9A
t
f
150
5