IRFH5215TR2PBF International Rectifier, IRFH5215TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5215TR2PBF
• Description: MOSFET N-CH 150V 5.0A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5215TR2PBF

• Input Capacitance (ciss) @ Vds: 1350pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN Exposed Pad
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 104 W
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
0.1
30
25
20
15
10
10
0.001
5
0
1
0.01
Fig 9. Maximum Drain Current vs.
0.2
25
0.1
10
1E-006
1
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
D = 0.50
0.4
50
T C , Case Temperature (°C)
0.02
0.01
0.20
0.10
0.05
0.6
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
0.8
T J = 25°C
V GS = 0V
125
1.0
t 1 , Rectangular Pulse Duration (sec)
150
1.2
0.0001
1000
Fig 10. Threshold Voltage vs. Temperature
100
6.0
5.0
4.0
3.0
2.0
10
Fig 8. Maximum Safe Operating Area
0.001
1
-75 -50 -25
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 10mA
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1msec
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
0
0.01
25
100µsec
50
100
75 100 125 150
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0.1
1000