IRFH5215TR2PBF International Rectifier, IRFH5215TR2PBF Datasheet - Page 8

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IRFH5215TR2PBF

Manufacturer Part Number
IRFH5215TR2PBF
Description
MOSFET N-CH 150V 5.0A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5215TR2PBF

Input Capacitance (ciss) @ Vds
1350pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
58 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN Exposed Pad
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
27 A
Power Dissipation
104 W
Gate Charge Qg
20 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

ƒ
PQFN 5x6 Outline "B" Tape and Reel
††
†††
Qualification level
Moisture Sensitivity Level
RoHS compliant
Qualification information
Repetitive rating; pulse width limited by max. junction temperature.
R
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
8
Starting T
θ
is measured at
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
http://www.irf.com/product-info/reliability
J
= 25°C, L = 0.75mH, R
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
J
G
= 50Ω, I
AS
= 16A.
PQFN 5mm x 6mm
Visit us at www.irf.com for sales contact information.12/2010
(per JE DE C JE S D47F
Data and specifications subject to change without notice.
Indus trial
Yes
(per JE DE C J-S T D-020D
††
†††
guidelines )
TAC Fax: (310) 252-7903
MS L1
www.irf.com
†††
)

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