STL7NM60N STMicroelectronics, STL7NM60N Datasheet - Page 5

• Manufacturer Part Number: STL7NM60N
• Description: MOSFET N-CH 600V 5.8A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL7NM60N

• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: 14-PowerFLAT™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11043-2

STL7NM60N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. When mounted on FR-4 board of 1inch², 2 oz Cu
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SDM
Symbol
Symbol
V
t
t
I
I
d(on)
d(off)
RRM
RRM
SD
I
Q
Q
t
SD
t
t
t
r
rr
rr
f
(1)
rr
rr
(3)
,
(2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18348 Rev 1
V
R
(see
I
I
di/dt = 100 A/µs,
V
(see
I
di/dt = 100 A/µs,
V
(see
DD
G
SD
SD
SD
DD
DD
= 4.7 Ω, V
Test conditions
= 300 V, I
= 5 A, V
= 5 A,
= 5 A,
Test conditions
Figure
= 60 V
= 60 V, Tj= 150 °C
Figure
Figure
14)
GS
16)
16)
D
GS
=0
= 2.5 A,
= 10 V
Electrical characteristics
Min.
Min
-
-
-
-
Typ.
Typ.
213
265
1.5
1.8
14
14
10
26
12
7
Max
Max.
5.8
1.3
23
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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