STL7NM60N STMicroelectronics, STL7NM60N Datasheet - Page 7

• Manufacturer Part Number: STL7NM60N
• Description: MOSFET N-CH 600V 5.8A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL7NM60N

• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: 14-PowerFLAT™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11043-2

STL7NM60N
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Normalized B
V
BV
(norm)
(norm)
1000
GS(th)
1.00
0.80
0.70
(pF)
1.10
0.99
0.97
0.95
100
0.90
1.01
0.93
1.07
1.05
1.03
DSS
10
C
1
-50
-50
0.1
Capacitance variations
vs temperature
-25
-25
1
0
0
25
25
I
D
=1mA
VDSS
10
I
D
50
50
=250µA
75
75
vs temperature
100
100
100
T
V
J
DS
Doc ID 18348 Rev 1
(°C)
T
AM06481v1
AM06483v1
AM06485v1
(V)
J
(°C)
Ciss
Crss
Coss
Figure 9.
Figure 11. Normalized on resistance vs
Figure 13. Source-drain diode forward
R
(norm)
DS(on)
E
(µJ)
(V)
V
1.1
0.9
0.7
0.5
0.2
2.0
1.0
1.7
1.5
1.3
0.6
0.4
oss
2.5
1.5
0.5
1.2
1.0
2.1
1.9
0.8
SD
0
0
-50
0
0
temperature
Output capacitance stored energy
characteristics
T
-25
100
J
1
=-50°C
T
2
0
J
200 300
=150°C
25
3
I
D
Electrical characteristics
=2.5A
4
50
400
5
75
500 600
100
6
T
J
=25°C
7
T
J
(°C)
AM08913v1
AM06482v1
AM06484v1
V
I
SD
DS
(A)
(V)
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