AUIRF1010ZS International Rectifier, AUIRF1010ZS Datasheet - Page 4

• Manufacturer Part Number: AUIRF1010ZS
• Description: MOSFET N-CH 55V 94A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010ZS

• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 7.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 63 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 3. Typical Transfer Characteristics
1000
Fig 1. Typical Output Characteristics
4
100
1000
10
100
1
10
1
0.1
4.0
V DS , Drain-to-Source Voltage (V)
5.0
V GS , Gate-to-Source Voltage (V)
6.0
1
T J = 25°C
4.5V
7.0
20µs PULSE WIDTH
Tj = 25°C
V DS = 25V
20µs PULSE WIDTH
8.0
10
T J = 175°C
9.0
10.0
100
11.0
1000
100
Fig 2. Typical Output Characteristics
100
10
80
60
40
20
0
0.1
0
Fig 4. Typical Forward Transconductance
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
20
1
4.5V
Vs. Drain Current
V DS = 10V
20µs PULSE WIDTH
T J = 175°C
40
20µs PULSE WIDTH
Tj = 175°C
T J = 25°C
10
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60
80
100