AUIRF1010ZS International Rectifier, AUIRF1010ZS Datasheet - Page 8

• Manufacturer Part Number: AUIRF1010ZS
• Description: MOSFET N-CH 55V 94A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010ZS

• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 7.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 63 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
1000
100
0.1
10
1.0E-08
1
140
120
100
80
60
40
20
0
Duty Cycle = Single Pulse
25
Fig 16. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
50
1.0E-07
Vs. Temperature
0.05
0.10
0.01
TOP
BOTTOM 10% Duty Cycle
I D = 75A
75
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
1.0E-06
Single Pulse
125
150
1.0E-05
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
1.0E-04
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
Allowable rise in junction temperature, not to exceed
(D, t
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
1.0E-03
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
pulsewidth,
= P
D (ave)
1.0E-02
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
tav
thJC
www.irf.com
1.0E-01
jmax
is