AUIRF3710ZS International Rectifier, AUIRF3710ZS Datasheet - Page 2

• Manufacturer Part Number: AUIRF3710ZS
• Description: MOSFET N-CH 100V 59A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3710ZS

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 160 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
V
ΔΒV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
R
I
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11).
recommended for use above this value.
T
Limited by T
SD
J
DSS
eff.
G
≤ 175°C.
= 25Ω, I
≤ 35A, di/dt ≤ 380A/μs, V
/ΔT
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 35A, V
, starting T
Parameter
GS
=10V. Part not
Parameter
J
™
DD
= 25°C, L = 0.27mH,
≤ V
(BR)DSS
,
J
…
†
‡
ˆ
‰
= 25°C (unless otherwise stated)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
35
J
R
This is only applied to TO-220AB pakcage.
C
as C
This value determined from sample failure population,
starting T
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
θ
= 25°C (unless otherwise stated)
oss
is measured at T
oss
eff. is a fixed capacitance that gives the same charging time
2900
1130
0.10
–––
–––
–––
–––
–––
–––
–––
290
150
170
280
–––
–––
–––
100
4.5
7.5
14
82
19
27
17
77
41
56
50
while V
J
= 25°C, L = 0.27mH,R
-200
–––
–––
–––
250
200
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
160
–––
4.0
1.3
18
20
28
40
59
75
DS
is rising from 0 to 80% V
2
J
Pak, when mounted on 1" square PCB
V/°C
approximately 90°C.
mΩ
μA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 35A
= 35A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= 50V, I
= 100V, V
= 100V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
G
= 25Ω, I
GS
, I
D
f
f
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250μA
= 250μA
= 35A, V
= 35A
= 35A, V
= 35A
GS
GS
= 0V to 80V
DSS
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
AS
f
= 0V
= 0V, T
www.irf.com
= 35A, V
.
f
D
= 1mA
DD
GS
J
G
= 25V
= 125°C
= 0V
G
GS
=10V
f
S
D
D
S