AUIRF3710ZS International Rectifier, AUIRF3710ZS Datasheet - Page 4

• Manufacturer Part Number: AUIRF3710ZS
• Description: MOSFET N-CH 100V 59A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3710ZS

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 160 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
1000
0.01
Fig 3. Typical Transfer Characteristics
100
100
Fig 1. Typical Output Characteristics
0.1
10
10
1
0
1
0.1
2
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
T J = 25°C
6
4.5V
20μs PULSE WIDTH
Tj = 25°C
V DS = 25V
20μs PULSE WIDTH
10
T J = 175°C
8
100
10
Fig 4. Typical Forward Transconductance
1000
100
10
Fig 2. Typical Output Characteristics
120
100
1
80
60
40
20
0
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
10
I D , Drain-to-Source Current (A)
vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
20
1
30
20μs PULSE WIDTH
Tj = 175°C
VDS = 15V
20μs PULSE WIDTH
4.5V
40
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10
50
T J = 25°C
T J = 175°C
60
100
70