AUIRF3205ZS International Rectifier, AUIRF3205ZS Datasheet - Page 12

• Manufacturer Part Number: AUIRF3205ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3205ZS

• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 170 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 76 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
2
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
TRR
TRL
330.00
(14.173)
MAX.
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
16.10 (.634)
15.90 (.626)
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
15.42 (.609)
15.22 (.601)
4
3
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
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