AUIRF3205ZS International Rectifier, AUIRF3205ZS Datasheet - Page 2

• Manufacturer Part Number: AUIRF3205ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3205ZS

• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 170 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 76 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
recommended for use above this value.
ƒ
„
Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
2
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
Repetitive rating; pulse width limited by
Limited by T
R
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
same charging time as C
from 0 to 80% V
g
gs
gd
rr
max. junction temperature. (See fig. 11).
(BR)DSS
G
oss
eff.
= 25Ω, I
eff. is a fixed capacitance that gives the
/∆T
J
AS
Jmax
= 66A, V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
DSS
, starting T
.
Parameter
GS
oss
=10V. Part not
J
while V
= 25°C, L = 0.08mH
™
Parameter
Parameter
DS
is rising
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
71
…
†
‡
ˆ
‰
R
Limited by T
This value determined from sample failure population, starting
T
This is only applied to TO-220AB pakcage.
This is applied to D
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R
avalanche performance.
J
G
θ
= 25°C, L = 0.08mH
is measured at T
= 25Ω, I
0.051
Typ.
Typ.
3450
1940
Typ.
–––
–––
–––
–––
–––
–––
–––
550
310
430
640
–––
–––
–––
4.9
4.5
7.5
76
21
30
18
95
45
67
28
25
AS
Max.
Max.
Jmax
Max.
-200
–––
–––
–––
250
200
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
440
6.5
4.0
1.3
20
75
42
38
= 66A, V
, see Fig.12a, 12b, 15, 16 for typical repetitive
2
J
Pak, when mounted on 1" square PCB (FR-
Units
Units
Units
V/°C
approximately 90°C.
mΩ
GS
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
=10V.
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 66A
= 66A
= 25°C, I
= 25°C, I
= 6.8 Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 28V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
Conditions
D
DS
Conditions
S
F
D
D
Conditions
DS
DS
= 250µA
GS
GS
= 250µA
= 66A, V
= 66A
= 66A, V
= 66A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
e
D
www.irf.com
= 1mA
DD
GS
J
= 125°C
= 25V
= 0V
f
e