AUIRF7736M2TR International Rectifier, AUIRF7736M2TR Datasheet - Page 2

• Manufacturer Part Number: AUIRF7736M2TR
• Description: MOSFET N-CH 40V 179A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7736M2TR

• Input Capacitance (ciss) @ Vds: 4267pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 mOhm @ 65A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 179A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 2.5 W
• Gate Charge Qg: 72 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ƒ Surface mounted on 1 in. square Cu
Notes  through Š are on page 11
V
∆V
R
V
∆V
gfs
R
I
I
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
Static Characteristics @ T
Dynamic Characteristics @ T
Diode Characteristics @ T
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(still air).
(BR)DSS
GS(th)
SD
DS(on)
G
g
sw
oss
iss
oss
rss
oss
oss
oss
rr
Q
Q
Q
2
Q
(BR)DSS
GS(th)
gs1
gs2
godr
gd
eff.
/∆T
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
g
Parameter
Parameter
gs2
J
J
= 25°C (unless otherwise stated)
= 25°C (unless otherwise stated)
+ Q
J
gd
= 25°C (unless otherwise stated)
)
‰
clip heatsink (still air)
Min.
Min.
Min.
–––
–––
–––
115
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
Typ.
Typ.
4267
3489
1222
Typ.
0.03
24.7
32.3
with small
–––
-9.0
–––
–––
–––
–––
–––
943
422
843
–––
–––
–––
2.5
3.0
1.0
6.3
72
15
26
31
21
43
39
27
35
38
Max. Units
Max. Units
Max.
-100
–––
–––
–––
–––
–––
250
100
108
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
108
432
3.0
4.0
1.3
53
57
5
mV/°C
Units
V/°C
mΩ
board with metalized back and with small
clip heatsink (still air)
µA
nA
nC
nC
nC
pF
ns
ns
V
V
S
Ω
A
V
‰ Mounted on minimum footprint full size
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig.11
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
di/dt = 100A/µs
D
D
I
I
S
F
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DS
DD
G
GS
DS
GS
GS
GS
= 65A
= 65A
= 65A, V
= 65A, V
= 6.8Ω
= V
= 10V, I
= 40V, V
= 40V, V
= 20V
= 16V, V
= 20V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
GS
DD
D
DS
DS
DS
D
D
= 250µA
GS
GS
GS
GS
Conditions
Conditions
= 150µA
= 65A
= 65A
Conditions
= 0V
= 25V
= 1.0V, f=1.0MHz
= 32V, f=1.0MHz
= 0V to 32V
i
= 0V
= 0V, T
= 0V
= 10V
i
i
D
= 1mA
J
www.irf.com
i
= 125°C
G
D
S