AUIRF7736M2TR International Rectifier, AUIRF7736M2TR Datasheet - Page 6

• Manufacturer Part Number: AUIRF7736M2TR
• Description: MOSFET N-CH 40V 179A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7736M2TR

• Input Capacitance (ciss) @ Vds: 4267pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 mOhm @ 65A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 179A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 2.5 W
• Gate Charge Qg: 72 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
6
100
0.1
10
1
Fig 13. Maximum Safe Operating Area
0.10
Tc = 25°C
Tj = 175°C
Single Pulse
0.001
1000
100
0.01
0.1
0.1
10
10
1.0E-06
1
V DS , Drain-to-Source Voltage (V)
1E-006
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
D = 0.50
DC
10msec
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.02
0.10
0.01
0.05
1msec
0.05
0.10
0.01
1.0E-05
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
10
Fig 16. Typical Avalanche Current Vs.Pulsewidth
Duty Cycle = Single Pulse
100µsec
100
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
tav (sec)
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
Fig 14. Maximum Avalanche Energy vs. Temperature
1
Ci
250
200
150
100
i/Ri
50
R
1.0E-03
0
1
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
1
0.001
25
τ
2
τ
R
2
Starting T J , Junction Temperature (°C)
2
R
2
50
R
τ
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
75
τ
R
4
τ
4
R
4
4
1.0E-02
τ
C
τ
Ri (°C/W)
0.01
100
0.07641
0.36635
0.94890 0.039150
1.00767
TOP
BOTTOM 65A
125
0.000021
0.000737
0.007321
τi (sec)
32A
I D
14A
150
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1.0E-01
0.1
175