AUIRF7737L2TR1 International Rectifier, AUIRF7737L2TR1 Datasheet

AUIRF7737L2TR1

Manufacturer Part Number

AUIRF7737L2TR1

Description

MOSFET N-CH 40V 315A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF7737L2TR.pdf (11 pages)

Specifications of AUIRF7737L2TR1

Input Capacitance (ciss) @ Vds

5469pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.9 mOhm @ 94A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

315A

Vgs(th) (max) @ Id

4V @ 150µA

Gate Charge (qg) @ Vgs

134nC @ 10V

Power - Max

3.3W

Mounting Type

Package / Case

Continuous Drain Current Id

31A

Drain Source Voltage Vds

40V

On Resistance Rds(on)

0.0015ohm

Rds(on) Test Voltage Vgs

10V

Transistor Case Style

DirectFET L6

No. Of Pins

Svhc

No SVHC

Rohs Compliant

Yes

Configuration

Single Hex Drain Hex Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.9 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

31 A

Power Dissipation

3.3 W

Gate Charge Qg

89 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

The AUIRF7737L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging

technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

DirectFET®

red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET®

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced

platform coupled with the latest silicon technology allows the AUIRF7737L2 to offer substantial system level savings and performance improvement

specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest

processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction

temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable

device for high current automotive applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions. Ambient temperature (T

HEXFET

Applicable DirectFET

Thermal Resistance

STG

θJA

θJCan

θJ-PCB

@ T

Advanced Process Technology

Optimized for Automotive Motor Drive, DC-DC and

other Heavy Load Applications

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and

Reliability

Lead Free, RoHS Compliant and Halogen Free

Automotive Qualified *

(tested)

= 25°C

= 100°C

is a registered trademark of International Rectifier.

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-

package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

Outline and Substrate Outline

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

@ 10V (Package Limited)

) is 25°C, unless otherwise specified.

Automotive DirectFET

Typ.

D (Silicon Limited)

12.5

–––

See Fig.18a, 18b, 16, 17

(BR)DSS

DS(on)

AUIRF7737L2TR1

AUIRF7737L2TR

-55 to + 175

Max.

0.56

± 20

156

110

315

624

104

386

270

typ.

3.3

max.

Power MOSFET ‚

Max.

–––

1.8

0.5

DirectFET

DirectFET®

1.5mΩ

1.9mΩ

156A

89nC

ISOMETRIC

40V

packaging

Units

°C/W

W/°C

°C

The

Related parts for AUIRF7737L2TR1

AUIRF7737L2TR1 Summary of contents

Page 1

... AUTOMOTIVE GRADE Automotive DirectFET 25°C, unless otherwise specified. A Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited Parameter AUIRF7737L2TR AUIRF7737L2TR1 Power MOSFET ‚ ® V 40V (BR)DSS R typ. 1.5mΩ DS(on) max. 1.9mΩ I 156A D (Silicon Limited) Q 89nC ...

Page 2

Static Characteristics @ T = 25°C (unless otherwise stated) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ...

Page 5

1. 1.0mA ID = 250µA 2 150µA 1.5 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 7. Typical Threshold ...

Page 6

OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 1msec 10msec 25° 175°C Single Pulse 1 0. Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area 10 ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 100 94A 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy Vs. Temperature ...

Page 8

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations Automotive DirectFET ® Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO ...

Page 10

... C … Repetitive rating; pulse width limited by max. junction temperature. 10 NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as AUIRF7737L2TR). For 1000 parts on 7" reel, order AUIRF7737L2TR1 IMPERIAL STANDARD OPTION (QTY 4000) MIN MAX MAX CODE 12 ...

Page 11

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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