AUIRF1405ZS International Rectifier, AUIRF1405ZS Datasheet - Page 10

• Manufacturer Part Number: AUIRF1405ZS
• Description: MOSFET N-CH 55V 150A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1405ZS

• Input Capacitance (ciss) @ Vds: 4780pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.9 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 150 A
• Power Dissipation: 230 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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