AUIRF1405ZS International Rectifier, AUIRF1405ZS Datasheet - Page 8

• Manufacturer Part Number: AUIRF1405ZS
• Description: MOSFET N-CH 55V 150A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1405ZS

• Input Capacitance (ciss) @ Vds: 4780pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.9 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 150 A
• Power Dissipation: 230 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
10000
1000
100
300
250
200
150
100
10
50
1.0E-08
1
0
Fig 16. Maximum Avalanche Energy
25
Starting T J , Junction Temperature (°C)
0.05
0.10
0.01
Duty Cycle = Single Pulse
50
vs. Temperature
1.0E-07
TOP
BOTTOM 10% Duty Cycle
I D = 75A
75
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
Single Pulse
1.0E-06
125
150
1.0E-05
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
avalanche pulse.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
1.0E-04
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-03
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
1.0E-02
]
www.irf.com
thJC
tav
jmax
1.0E-01
is