AUIRFS4310 International Rectifier, AUIRFS4310 Datasheet - Page 7

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AUIRFS4310

Manufacturer Part Number
AUIRFS4310
Description
MOSFET N-CH 100V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRFS4310

Input Capacitance (ciss) @ Vds
7670pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
130 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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5.0
4.0
3.0
2.0
1.0
Fig 16. Threshold Voltage Vs. Temperature
20
16
12
8
4
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
T J , Temperature ( °C )
0
di f / dt - (A / µs)
25
50
I F = 45A
V R = 85V
T J = 125°C
T J = 25°C
75
500
400
300
200
100
I D = 1.0A
I D = 1.0mA
I D = 250µA
100 125 150 175
0
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / µs)
I F = 45A
V R = 85V
T J = 125°C
T J = 25°C
500
400
300
200
100
20
16
12
8
4
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / µs)
di f / dt - (A / µs)
I F = 30A
V R = 85V
T J = 125°C
T J = 25°C
I F = 30A
V R = 85V
T J = 125°C
T J = 25°C
f
f
7

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