AUIRFS4310 International Rectifier, AUIRFS4310 Datasheet - Page 8
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AUIRFS4310
Manufacturer Part Number
AUIRFS4310
Description
MOSFET N-CH 100V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFS4310TRL.pdf
(13 pages)
Specifications of AUIRFS4310
Input Capacitance (ciss) @ Vds
7670pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
130 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRFS4310
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRFS4310PBF
Manufacturer:
IR
Quantity:
21 400
Company:
Part Number:
AUIRFS4310TRLPBF
Manufacturer:
IR
Quantity:
6 000
Part Number:
AUIRFS4310Z
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
AUIRFS4310ZPBF
Manufacturer:
IR
Quantity:
6 000
Part Number:
AUIRFS4310ZTRL
Manufacturer:
IR
Quantity:
20 000
8
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit
0
+
R
-
R G
20V
V
V DS
GS
D.U.T
Duty Factor < 0.1%
Pulse Width < 1µs
V
t p
1K
GS
Fig 21.
I AS
D.U.T
V
+
-
DS
0.01
L
SD
DUT
D.U.T
L
L
15V
D
-
V
G
HEXFET
DRIVER
DD
+
-
+
-
+
V DD
VCC
V
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
90%
Fig 22b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 23b. Switching Time Waveforms
P.W.
SD
GS
= 5V for Logic Level Devices
DS
I
Fig 24b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple
Body Diode
t
Period
d(on)
Body Diode Forward
Diode Recovery
5%
Current
t
r
Qgd
dv/dt
Forward Drop
t p
di/dt
Qgodr
D =
t
d(off)
Period
P.W.
V
t
(BR)DSS
f
V
V
I
SD
GS
DD
Vgs
=10V
Id
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