AUIRF7739L2TR International Rectifier, AUIRF7739L2TR Datasheet

AUIRF7739L2TR

Manufacturer Part Number

AUIRF7739L2TR

Description

MOSFET N-CH 40V 375A DIRECTFET2

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF7739L2TR.pdf (11 pages)

Specifications of AUIRF7739L2TR

Input Capacitance (ciss) @ Vds

11880pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1 mOhm @ 160A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

375A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

330nC @ 10V

Power - Max

3.8W

Mounting Type

Package / Case

Configuration

Single Quad Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

46 A

Power Dissipation

3.8 W

Gate Charge Qg

220 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

•

Description

The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-

1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automo-

tive power systems.

This HEXFET

coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and performance improvement specifically in

motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to

achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak

current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional

operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions

for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

Applicable DirectFET

HEXFET

*Qualification standards can be found at http://www.irf.com/

Thermal Resistance

STG

θJA

θJCan

θJ-PCB

@ T

(tested)

= 25°C

= 100°C

is a registered trademark of International Rectifier.

Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET

) is 25°C, unless otherwise specified.

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

Outline and Substrate Outline

Ãg

AUTOMOTIVE GRADE

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

Automotive DirectFET

AUIRF7739L2TR1

Typ.

AUIRF7739L2TR

12.5

D (Silicon Limited)

–––

See Fig.12a, 12b, 15, 16

(BR)DSS

DS(on)

The DirectFET package is compatible with existing

-55 to + 175

Max.

1070

0.83

± 20

270

190

375

125

270

160

270

3.8

typ.

max.

Power MOSFET ‚

Max.

–––

1.2

0.5

DirectFET™ ISOMETRIC

packaging to achieve the

packaging platform

1000µΩ

700µΩ

220nC

270A

40V

12/01/2010

Units

°C/W

W/°C

°C

Related parts for AUIRF7739L2TR

AUIRF7739L2TR Summary of contents

Page 1

... Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175° ...

Page 2

Static Characteristics @ T = 25°C (unless otherwise stated) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH 25°C 4.5V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 125° 25°C ...

Page 5

250µA 2 1.0mA 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( °C ) ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 1000 100 1msec 10msec 25° 175°C Single Pulse Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area 10 ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cy cle 250 160A 200 150 100 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 21. ® Please see AN-1035 for DirectFET Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 Driver Gate ...

Page 9

Please see AN-1035 for DirectFET ® Automotive DirectFET Note: For the most current drawing please refer to IR website at http://www.irf.com/package www.irf.com ® assembly details and stencil and substrate design recommendations Part Marking 9 ...

Page 10

Automotive DirectFET Note: For the most current drawing please refer to IR website at http://www.irf.com/package Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET ƒ Surface ...

Page 11

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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