AUIRF7739L2TR International Rectifier, AUIRF7739L2TR Datasheet - Page 4

• Manufacturer Part Number: AUIRF7739L2TR
• Description: MOSFET N-CH 40V 375A DIRECTFET2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7739L2TR

• Input Capacitance (ciss) @ Vds: 11880pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Power - Max: 3.8W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 3.8 W
• Gate Charge Qg: 220 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
1000
100
0.1
100
10
0.1
Fig 5. Typical Transfer Characteristics
10
1
10
Fig 1. Typical Output Characteristics
1
8
6
4
2
0
0.1
5.0
2
V GS, Gate -to -Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
5.5
V GS , Gate-to-Source Voltage (V)
3
T J = 175°C
4.5V
1
T J = 25°C
6.0
4
10
6.5
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
≤60µs PULSE WIDTH
5
T J = 25°C
T J = 125°C
7.0
TOP
BOTTOM
6
100
I D = 160A
7.5
7
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
8.0
8
Fig 4. Typical On-Resistance vs. Drain Current
Fig 6. Normalized On-Resistance vs. Temperature
1000
100
10
0.93
0.92
0.91
0.90
0.89
0.88
0.87
0.86
0.85
2.0
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
V GS = 10V
I D = 160A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
4.5V
40
1
I D , Drain Current (A)
80
≤ 60µs PULSE WIDTH
Tj = 175°C
10
120
TOP
BOTTOM
100
160
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VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
200