IPD60R1K4C6 Infineon Technologies, IPD60R1K4C6 Datasheet - Page 14

• Manufacturer Part Number: IPD60R1K4C6
• Description: MOSFET N-CH 600V 3.2A TO252-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPD60R1K4C6

• Input Capacitance (ciss) @ Vds: 200pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 3.5V @ 90µA
• Gate Charge (qg) @ Vgs: 9.4nC @ 10V
• Power - Max: 28.4W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.26 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 28.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO252-3
• Vds (max): 600.0 V
• Package: DPAK (TO-252)
• Rds(on) @ Tj=25°c Vgs=10: 1,400.0 mOhm
• Id(max) @ Tc=25°c: 3.2 A
• Idpuls (max): 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD60R1K4C6TR

component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered