BSZ22DN20NS3G Infineon Technologies

BSZ22DN20NS3G

Manufacturer Part Number

BSZ22DN20NS3G

Description

MOSFET N-CH 200V 7A 8TDSON

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Specifications of BSZ22DN20NS3G

Input Capacitance (ciss) @ Vds

430pF @ 100V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

225 mOhm @ 3.5A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 13µA

Gate Charge (qg) @ Vgs

5.6nC @ 10V

Power - Max

34W

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

194 mOhms

Forward Transconductance Gfs (max / Min)

7 S, 3.5 S

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

7 A

Power Dissipation

34 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BSZ22DN20NS3GTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSZ22DN20NS3G

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

BSZ22DN20NS3G

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