FGH40N60SMD Fairchild Semiconductor, FGH40N60SMD Datasheet - Page 3

• Manufacturer Part Number: FGH40N60SMD
• Description: IGBT 600V 40A TO-247-3
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: +/- 400 nA
• Power Dissipation: 349 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMD Rev. A
Electrical Characteristics of the IGBT
Electrical Characteristics of the Diode
Q
Q
Q
V
E
t
Q
Symbol
Symbol
rr
FM
rec
g
ge
gc
rr
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
Parameter
V
V
I
I
F
F
CE
GE
= 20A
=20A, dI
= 400V, I
= 15V
Test Conditions
Test Conditions
F
/dt = 200A/ms
(Continued)
C
T
= 40A,
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
C
C
C
C
C
C
C
= 25
= 175
= 175
= 25
= 175
= 25
= 175
o
o
o
C
C
C
o
o
o
o
C
C
C
C
Min.
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
1.67
48.9
46.8
445
119
110
2.3
13
58
36
Max
Max
180
2.8
20
90
www.fairchildsemi.com
-
-
-
-
-
-
Unit
Unit
nC
nC
nC
nC
uJ
ns
s
s
V