FGH40N60SMD Fairchild Semiconductor, FGH40N60SMD Datasheet - Page 8

• Manufacturer Part Number: FGH40N60SMD
• Description: IGBT 600V 40A TO-247-3
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: +/- 400 nA
• Power Dissipation: 349 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMD Rev. A
Typical Performance Characteristics
0.001
0.01
0.01
0.1
0.1
1
3
1
10
10
-5
0.01
0.05
0.02
-5
0.5
0.2
0.1
single pulse
0.5
0.05
0.02
0.01
0.2
0.1
single pulse
Figure 25.Transient Thermal Impedance of IGBT
Figure 26.Transient Thermal Impedance of Diode
10
10
-4
-4
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
10
10
-3
-3
8
10
10
-2
-2
Peak T
Duty Factor, D = t1/t2
Duty Factor, D = t1/t2
Peak T
P
P
DM
DM
j
= Pdm x Zthjc + T
j
10
= Pdm x Zthjc + T
10
t
-1
t
1
1
-1
t
t
2
2
C
C
10
10
0
0
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