FGH25N120FTDS Fairchild Semiconductor, FGH25N120FTDS Datasheet - Page 4

• Manufacturer Part Number: FGH25N120FTDS
• Description: IGBT 1200V 25A FIELD STOP TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH25N120FTDS

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH25N120FTDS
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
180
150
120
3.0
2.5
2.0
1.5
1.0
80
60
40
20
90
60
30
0
0
25
0
0
Rev. A
T
Characteristics
Common Emitter
V
T
T
Temperature at Variant Current Level
Common Emitter
V
C
Collector-EmitterCase Temperature, T
GE
C
C
GE
= 25
= 25
= 125
= 15V
= 15V
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
o
C
C
o
C
50
2
17V
2
20V
75
4
15V
I
C
50A
25A
= 10A
4
100
CE
CE
6
V
[V]
[V]
GE
C
10V
12V
9V
= 8V
[
o
C
]
125
6
8
4
Figure 2. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. V
180
150
120
120
100
90
60
30
80
60
40
20
20
16
12
0
0
8
4
0
0
0
0
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
C
o
C
4
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
2
I
C
= 10A
25A
5
17V
8
20V
4
50A
12
Common Emitter
T
15V
10
C
GE
= 25
GE
CE
6
[V]
[V]
o
V
[V]
16
C
GE
12V
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10V
9V
GE
= 8V
15
20
8