FGH25N120FTDS Fairchild Semiconductor, FGH25N120FTDS Datasheet - Page 6

• Manufacturer Part Number: FGH25N120FTDS
• Description: IGBT 1200V 25A FIELD STOP TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH25N120FTDS

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH25N120FTDS
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs. Collector Current
1000
1000
100
100
0.1
10
20
10
1
0
0
0
Rev. A
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
C
C
CC
C
C
GE
Collector Current
= 25A
= 25
= 125
= 25
= 125
Gate Resistance
= 600V, V
= 15V, R
o
10
10
o
10
C
C
o
o
C
C
Gate Resistance, R
Collector Current, I
Collector Current, I
G
GE
= 10
= 15V
20
20
20
Ω
t
t
d(off)
f
t
t
d(off)
f
Common Emitter
V
T
T
30
30
30
C
C
GE
G
= 25
= 125
C
E
E
= 15V, R
C
[ Ω ]
on
off
[A]
[A]
o
C
o
C
40
40
40
G
= 10
Ω
50
50
50
6
Figure 18. Turn off Switing SOA Characteristics
Figure 16. Switching Loss vs. Gate Resistance
Figure 14. Turn-on Characteristics vs.
100
100
10
10
10
1
1
0
0
1
Safe Operating Area
V
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
GE
GE
C
C
CC
C
C
= 25A
= 25
= 125
= 25
= 125
= 15V, T
= 15V, R
= 600V, V
Collector Current
Collector-Emitter Voltage, V
10
o
10
o
C
C
o
o
C
C
Collector Current, I
Gate Resistance, R
C
10
G
GE
= 125
= 10
= 15V
20
20
Ω
o
C
E
E
on
off
100
30
30
t
t
C
d(on)
r
G
[A]
[ Ω ]
CE
40
40
[V]
1000 3000
www.fairchildsemi.com
50
50