BLF7G24L-140,118 NXP Semiconductors, BLF7G24L-140,118 Datasheet
BLF7G24L-140,118
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BLF7G24L-140,118 Summary of contents
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... BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 1 carrier W-CDMA [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...
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... stg Thermal characteristics Table 5. Symbol Parameter R th(j-c) BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads - earless flanged LDMOST ceramic package; 2 leads Limiting values ...
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... P L(AV η D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G24L-140 and BLF7G24LS-140 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 Characteristics C unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage ...
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... 1300 mA ( 2300 MHz ( 2400 MHz Fig 3. Single carrier IS-95 ACPR at 885 kHz as a function of load power; typical values BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 001aan523 ( 100 P (W) L Fig 2. 001aan525 APCR (dBc 100 P (W) L Fig 4. All information provided in this document is subject to legal disclaimers. ...
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... 1300 mA ( 2300 MHz ( 2400 MHz Fig 5. Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 001aan527 100 P (W) L Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 April 2011 Power LDMOS transistor ...
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... 1300 mA ( 2300 MHz ( 2400 MHz Fig 7. Pulsed CW power gain as a function of load power; typical values BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 001aan529 120 160 200 P (W) L Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 April 2011 Power LDMOS transistor 50 η ...
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... 1300 mA ( 2300 MHz ( 2400 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a function of load power; typical values BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 001aan531 (1) (2) 80 120 P (W) L Fig 10. Single carrier W-CDMA drain efficiency as a 001aan533 APCR (dBc) (2) (1) ...
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... 2300 MHz ( 2400 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 001aan535 (1) (2) 80 120 P (W) L Fig 14. Single carrier W-CDMA peak output power as a All information provided in this document is subject to legal disclaimers. ...
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... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 15. Package outline SOT502A BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 16. Package outline SOT502B BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
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... Revision history Table 9. Revision history Document ID BLF7G24L-140_7G24LS-140 v.2 Modifications: BLF7G24L-140_7G24LS-140 v.1 BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor Narrowband Code Division Multiple Access ...
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... BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G24L-140_7G24LS-140 Preliminary data sheet BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 5 April 2011 Document identifier: BLF7G24L-140_7G24LS-140 ...