BLF7G22LS-250P,112 NXP Semiconductors, BLF7G22LS-250P,112 Datasheet - Page 3

• Manufacturer Part Number: BLF7G22LS-250P,112
• Description: TRANS LDMOS SOT539B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-250P,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18dB
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 70W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G22L-250P_22LS-250P_1
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 PDPCH; f
V
circuit.
The BLF7G22L-250P and BLF7G22LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
I
I
I
I
g
R
Symbol
P
G
RL
η
ACPR
Dq
DSS
DSX
GSS
j
DS
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 28 V; I
°
C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage V
quiescent drain current
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Dq
DS
BLF7G22L-250P; BLF7G22LS-250P
= 2160 mA; T
All information provided in this document is subject to legal disclaimers.
= 32 V; I
1
= 2110 MHz; f
Rev. 01 — 6 May 2010
Dq
case
= 2160 mA; P
= 25
°
C; unless otherwise specified; in a class-AB production test
2
= 2140 MHz; f
Conditions
V
in a common source
class-AB production test
circuit.
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 5.25 A
L
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 70 W (CW); f = 2140 MHz.
Conditions
P
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
D
D
Conditions
T
T
= 1.5 mA
+ 3.75 V;
DS
+ 3.75 V;
3
= 70 W
= 70 W
= 70 W
= 70 W
= 150 mA
= 7.5 A
case
j
= 2170 MHz; RF performance at
= 28 V
≤ 150 °C
= 0 V
= 80 °C; P
Min
-
17
-
-
-
Power LDMOS transistor
L
Min
<tbd> -
<tbd> <tbd> <tbd> V
-
-
-
-
-
-
= 50 W;
Typ
70
18
<tbd>
30
−28
© NXP B.V. 2010. All rights reserved.
Typ
1900 -
-
<tbd> -
-
<tbd> -
<tbd> -
Max
-
-
-
-
Typ
0.45
Max
-
<tbd> μA
<tbd> nA
W
Unit
dB
dB
%
dBc
Unit
K/W
Unit
V
mA
A
S
Ω
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