BLF7G22LS-250P,112 NXP Semiconductors, BLF7G22LS-250P,112 Datasheet - Page 6

• Manufacturer Part Number: BLF7G22LS-250P,112
• Description: TRANS LDMOS SOT539B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-250P,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18dB
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 70W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G22L-250P_22LS-250P_1
Objective data sheet
Document ID
BLF7G22L-250P_22LS-250P_1
Revision history
Table 8.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Abbreviations
BLF7G22L-250P; BLF7G22LS-250P
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
20100506
Release date
Rev. 01 — 6 May 2010
Data sheet status
Objective data sheet
Change notice
-
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
Supersedes
-
6 of 9