BLF888AS,112 NXP Semiconductors, BLF888AS,112 Datasheet - Page 9

• Manufacturer Part Number: BLF888AS,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888AS,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
[1]
[2]
[3]
[4]
[5]
BLF888A_BLF888AS
Preliminary data sheet
Component
B1, B2
C1
C2, C3, C4, C5,
C6
C7
C8
C9
C10, C13, C14
C11, C12
C15, C16
C17, C18, C23,
C24
C19, C20
C21, C22
C30
C31
C32
C33, C34, C35
C36, C37
L1
L2
L3, L32
L4
L5
L30
L31
L33
R1, R2
R3, R4
R5, R6
R7, R8
American technical ceramics type 800R or capacitor of same quality.
American technical ceramics type 800B or capacitor of same quality.
American technical ceramics type 180R or capacitor of same quality.
American technical ceramics type 100A or capacitor of same quality.
Printed-Circuit Board (PCB): Taconic RF35; ε
thickness copper plating = 35 μm.
List of components
Figure
Description
semi rigid coax
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
wire resistor
SMD resistor
wire resistor
potentiometer
10,
Figure 11
and
All information provided in this document is subject to legal disclaimers.
r
Figure
= 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
Rev. 2 — 1 March 2011
12.
Value
25 Ω; 49.5 mm
12 pF
8.2 pF
6.8 pF
2.7 pF
2.2 pF
100 pF
10 pF
4.7 μF, 50 V
100 pF
10 μF, 50 V
470 μF; 63 V
10 pF
9.1 pF
3.9 pF
100 pF
4.7 μF, 50 V
-
-
-
-
-
-
-
-
10 Ω
5.6 Ω
100 Ω
10 kΩ
BLF888A; BLF888AS
[1]
[1]
[2]
[2]
[2]
[3]
[2]
[2]
[4]
[4]
[4]
[4]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
Remarks
UT-090C-25 (EZ 90-25)
capacitor of same quality.
TDK C570X7R1H106KT000N or
capacitor of same quality.
capacitor of same quality.
(W × L) 15 mm × 13 mm
(W × L) 5 mm × 26 mm
(W × L) 2 mm × 49.5 mm
(W × L) 1.7 mm 3.5 mm
(W × L) 2 mm × 9.5 mm
(W × L) 5 mm × 13 mm
(W × L) 2 mm × 11 mm
(W × L) 2 mm × 3 mm
0805
Kemet C1210X475K5RAC-TU or
TDK C4532X7R1E475MT020U or
UHF power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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