BFS520,135 NXP Semiconductors, BFS520,135 Datasheet - Page 2

• Manufacturer Part Number: BFS520,135
• Description: TRANS NPN 15V 70MA 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS520,135

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
 SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
excellent reliability
stg
j
CBO
CES
tot
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
1
2
3
open emitter
R
up to T
I
I
T
I
T
I
T
C
C
c
c
amb
amb
amb
BE
= 20 mA; V
= 5 mA; V
= 20 mA; V
= 20 mA; V
base
emitter
collector
= 0
open emitter
R
open collector
up to T
= 25 C
= 25 C
= 25 C
BE
s
Code: N2
= 118 C; note 1
DESCRIPTION
= 0
CONDITIONS
2
CE
s
CE
= 118 C; note 1
CE
CE
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
= 6 V; T
= 6 V; f = 1 GHz;
CONDITIONS
j
= 25 C
handbook, 2 columns




60



MIN.
Top view





65

Fig.1 SOT323.
MIN.



120
9
15
1.1

TYP.
Product specification
1
20
15
2.5
70
300
150
175
3
MAX.
20
15
70
300
250


1.6
MAX.
BFS520
MBC870
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT