BFG93A/X,215 NXP Semiconductors, BFG93A/X,215 Datasheet - Page 7

• Manufacturer Part Number: BFG93A/X,215
• Description: TRANS NPN 12V 35MA 6GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG93A/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6196-2; BFG93A/X,215

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 6 GHz wideband transistors
Z
Maximum stable gain = 10.4 dB.
Z
o
o
= 50 .
= 50 .
stability
circle
+ j
+ j
– j
– j
Fig.13 Common emitter noise figure circles; typical values.
Fig.14 Common emitter noise figure circles; typical values.
0
0.2
0.2
0.2
0.2
10.4 dB
MSG
0.5
0.5
0.5
0.5
0.2
0.2
G
max
F
*
min
OPT
3.5 dB
Rev. 05 - 26 November 2007
= 9 dB
*
7 dB
= 3 dB
8 dB
4 dB
0.5
0.5
5 dB
F
min
2.5 dB
4 dB
6 dB
OPT
*
= 2 dB
1
1
1
1
1
1
2
2
2
5
2
2
5
2
10
MCD097
10
MCD098
5
5
5
5
BFG93A; BFG93A/X
10
10
10
10
Product specification
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