BFS17A,235 NXP Semiconductors, BFS17A,235 Datasheet - Page 4

• Manufacturer Part Number: BFS17A,235
• Description: TRANS NPN 15V 25MA 3GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17A,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 2.8GHz
• Noise Figure (db Typ @ F): 2.5dB @ 800MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
September1995
handbook, halfpage
handbook, full pagewidth
NPN 3 GHz wideband transistor
L1 = L3 = 5 H Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
V
CE
h FE
100
= 1 V; T
50
0
Fig.3
0
amb
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
= 25 C.
DC current gain as a function of
collector current.
10
75 Ω
input
V BB
20
1.5 nF
1 nF
I C (mA)
L1
MEA395
10 kΩ
30
3.3 pF
270 Ω
L2
4
1 nF
L3
handbook, halfpage
I
Fig.4
DUT
E
= 0; f = 1 MHz; T
18 Ω
(pF)
C c
0.5
1.5 nF
1
0
0
Collector capacitance as a function of
collector-base voltage.
0.68 pF
1 nF
MBB251
amb
V CC
4
output
75 Ω
= 25 C.
8
Product specification
12
V CB (V)
BFS17A
MEA903
16