BFR92A,235 NXP Semiconductors, BFR92A,235 Datasheet - Page 4

• Manufacturer Part Number: BFR92A,235
• Description: TRANS NPN 15V 25MA 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR92A,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 65
• Dc Current Gain Hfe Max: 135
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, full pagewidth
handbook, halfpage
NPN 5 GHz wideband transistor
(mW)
L1 = L3 = 5 H choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
P tot
400
300
200
100
0
0
Fig.3 Power derating curve.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
50
100
75
input
V BB
150
2.2 nF
1 nF
T s (
MEA425 - 1
L1
o
C)
200
33 k
Rev. 04 - 2 March 2009
300
3.3 pF
L2
DUT
1 nF
handbook, halfpage
L3
V
Fig.4
CE
h FE
18
120
= 10 V; T
80
40
0
2.2 nF
0
DC current gain as a function of collector
current; typical values.
j
0.82 pF
= 25 C.
1 nF
MBB269
V CC
output
10
75
20
Product specification
I
C
(mA)
BFR92A
MCD074
4 of 12
30