BFR93AW,135 NXP Semiconductors, BFR93AW,135 Datasheet - Page 4

TRANS NPN 12V 35MA 5GHZ SOT323

BFR93AW,135

Manufacturer Part Number
BFR93AW,135
Description
TRANS NPN 12V 35MA 5GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR93AW,135

Package / Case
SC-70, SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
CHARACTERISTICS
T
Note
1. G
1995 Sep 18
I
h
C
C
C
f
G
F
SYMBOL
j
CBO
T
FE
= 25 C (unless otherwise specified).
NPN 5 GHz wideband transistor
c
e
re
UM
UM
is the maximum unilateral power gain, assuming s
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
noise figure
PARAMETER
I
I
I
I
f = 1 MHz
I
I
f = 500 MHz
I
f = 1 GHz; T
I
f = 2 GHz; T
I
f = 1 GHz; 
I
f = 2 GHz; 
E
C
E
C
C
C
C
C
C
C
= 0; V
= 30 mA; V
= i
= i
= 0; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
= 5 mA; V
= 5 mA; V
e
c
= 0; V
= 0; V
CB
CE
CONDITIONS
= 5 V
= 5 V; f = 1 MHz
CB
EB
amb
amb
s
s
CE
CE
CE
CE
CE
CE
= 
= 
4
12
= 0.5 V;
= 5 V; f = 1 MHz
= 8 V;
= 8 V;
= 25 C
= 25 C
is zero and
= 5 V
= 5 V;
= 8 V;
= 8 V;
opt
opt
G
UM
40
4
=
MIN.
10
log
90
0.7
2.3
0.6
5
13
8
1.5
2.1
-------------------------------------------------------- dB.
1
TYP.
s
11
s
Product specification
2
21
 1
50
BFR93AW
MAX.
2
s
22
2
nA
pF
pF
pF
GHz
dB
dB
dB
dB
UNIT

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