BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 5
![TRANS NPN 5GHZ SC-70](/photos/16/4/160412/sot23_sml.jpg)
BFR94AW,115
Manufacturer Part Number
BFR94AW,115
Description
TRANS NPN 5GHZ SC-70
Manufacturer
NXP Semiconductors
Datasheet
1.BFR94AW115.pdf
(15 pages)
Specifications of BFR94AW,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
65
Gain Bandwidth Product Ft
5 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFR94AW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BFR94AW
Product data sheet
Fig 5.
Fig 7.
gain
(dB)
gain
(dB)
30
20
10
50
40
30
20
10
0
0
10
0
V
Gain as a function of collector current; typical
values
V
Gain as a function of frequency; typical values
CE
CE
MSG
= 10 V; f = 500 MHz.
G
= 10 V; I
UM
5
C
10
= 5 mA.
2
10
10
3
15
f (MHz)
All information provided in this document is subject to legal disclaimers.
001aam906
I
001aam908
C
MSG
G
G
(mA)
UM
max
10
Rev. 1 — 29 October 2010
20
4
Fig 6.
Fig 8.
gain
(dB)
gain
(dB)
30
20
10
50
40
30
20
10
0
0
10
0
V
Gain as a function of collector current; typical
values
V
Minimum noise figure as a function of
frequency; typical values
CE
CE
MSG
= 10 V; f = 1 GHz.
G
= 10 V; I
UM
5
C
10
= 5 mA.
NPN 5 GHz wideband transistor
2
10
10
BFR94AW
3
MSG
G
15
UM
© NXP B.V. 2010. All rights reserved.
f (MHz)
001aam907
I
001aam909
C
G
(mA)
max
10
20
4
5 of 15