BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 5

• Manufacturer Part Number: BFR94AW,115
• Description: TRANS NPN 5GHZ SC-70
• Manufacturer: NXP Semiconductors

Specifications of BFR94AW,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BFR94AW
Product data sheet
Fig 5.
Fig 7.
gain
(dB)
gain
(dB)
30
20
10
50
40
30
20
10
0
0
10
0
V
Gain as a function of collector current; typical
values
V
Gain as a function of frequency; typical values
CE
CE
MSG
= 10 V; f = 500 MHz.
G
= 10 V; I
UM
5
C
10
= 5 mA.
2
10
10
3
15
f (MHz)
All information provided in this document is subject to legal disclaimers.
001aam906
I
001aam908
C
MSG
G
G
(mA)
UM
max
10
Rev. 1 — 29 October 2010
20
4
Fig 6.
Fig 8.
gain
(dB)
gain
(dB)
30
20
10
50
40
30
20
10
0
0
10
0
V
Gain as a function of collector current; typical
values
V
Minimum noise figure as a function of
frequency; typical values
CE
CE
MSG
= 10 V; f = 1 GHz.
G
= 10 V; I
UM
5
C
10
= 5 mA.
NPN 5 GHz wideband transistor
2
10
10
BFR94AW
3
MSG
G
15
UM
© NXP B.V. 2010. All rights reserved.
f (MHz)
001aam907
I
001aam909
C
G
(mA)
max
10
20
4
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