BFU610F,115 NXP Semiconductors, BFU610F,115 Datasheet - Page 19

TRANSISTOR NPN SOT343F

BFU610F,115

Manufacturer Part Number
BFU610F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFU610F,115

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
15GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
Gain
13.5dB ~ 23.5dB
Power - Max
136mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 1mA, 2V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
10 mA
Power Dissipation
136 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
15 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Crimp type contact
3 pole DLX Series with crimp contacts
Accommodates wire size AWG 24 - 22 or 0.22 – 0.34 mm
Utilize standard B-type crimp tool (acc. IEC 60352-2)
Absolute leadfree and solderless connection:
- RoHs compliance
- health and eco-friendly
Fast and easy assembly
Gas-tight connection offers a constant contact resistance
Ideal solution for field and on-site termination
NC3FD-LX-HA
D L X C r i m p S e r i e s
NC3FD-LX-HA
X L R
C h a s s i s
NC3MD-LX-HA
NC3MD-LX-BAG-HA
2
Circumferential
ground spring
Detailed information of RF-shielding see page 12 - EMC
cable connector.
3 pole female XLR chassis connector with integrated
capacitive shield to shell connection to avoid RF-interference
and LF-noise
360° shield contact ensures best possible shielding and
chassis contact
D flange chassis for panel mount applications
Includes the locking nut of the NC3FX-SPEC for secure
fastening of a gooseneck for instance
Special flange for large openings available
Patent pending
NC3FDX-EMC-SPEC
C o n n e c t o r s
www.neutrik.com
E M C S e r i e s
NC3FDX-EMC-SPEC
27

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