BFU730F,115 NXP Semiconductors, BFU730F,115 Datasheet - Page 36

• Manufacturer Part Number: BFU730F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU730F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 55GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
• Power - Max: 197mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 205 @ 2mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

1.6.7 Medical Imaging
Application diagram
Recommended products
38
Function
Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest
power output and feature unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable very compact amplifier design.
driver
driver
driver
final
final
final
final
NXP Semiconductors RF Manual 14
Type
BLF871(S)
BLF881
BLF571
BLF573S
BLF574
BLF578
BLF645
Gradient coils
Magnet
RF coils
ELECTRONICS
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
(MHz)
f
RF
range
th
edition
1200
100
300
400
100
120
20
P
W
L
RF amplifier
X GRADIENT
Y GRADIENT
Z GRADIENT
AMPLIFIER
AMPLIFIER
AMPLIFIER
ADC
27.5
27.2
26.5
dB
G
21
21
24
18
p
GENERATOR
WAVEFORM
COMPUTER
DISPLAY
IMAGE
Features
`
`
`
`
Best broadband efficiency
Highest power (density) devices
Unrivalled ruggedness
Very consistent device performance
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