BFU790F,115 NXP Semiconductors, BFU790F,115 Datasheet - Page 30

• Manufacturer Part Number: BFU790F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU790F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
• Power - Max: 234mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 235 @ 10mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -

1.6 Automotive & Industrial
Note: looking for GPS? See chapter 1.5.1 Handset.
1.6.1 Active antenna
Application diagram
Recommended products
32
Function
Function
Function
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
2
3
1
st
nd
rd
LNA
LNA
LNA
stage
stage
stage
NXP Semiconductors RF Manual 14
Product
Product
Product
RF transistor
MMIC
MMIC
MMIC
antenna
Low noise wideband
wideband amplifier
General purpose
SiGe:C transistor
SiGe:C MMIC
amplifier
th
stage
LNA
edition
1
st
Package
SOT343R
SOT343R
Package
SOT363
SOT363
SOT363
SOT363
Package
SOT343F
SOT891
stage
LNA
2
nd
stage
LNA
Type
BGA2001
BGA2003
Type
BGM1013
BGM1011
BGA2715
BGA2748
Type
BFU725F/N1
BGU7003
3
rd
Features
`
`
`
`
`
`
Low-noise, high-gain microwave MMIC
Maximum stable gain = 19 dB at 1.575 GHz
110-GHz f
Optimized performance at low (5-mA) supply current
Extemely thin, leadless 6-pin SOT891 package
Integrated biasing and shutdown for easy integration
CHIPSET
T
brb215
-Silicon Germanium technology