LZ1418E100R,114 NXP Semiconductors, LZ1418E100R,114 Datasheet

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LZ1418E100R,114

Manufacturer Part Number
LZ1418E100R,114
Description
TRANSISTOR NPN POWER SOT441
Manufacturer
NXP Semiconductors
Datasheet
1.LZ1418E100R114.pdf (12 pages)

Specifications of LZ1418E100R,114

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.6GHz
Power - Max
45W
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 2A, 3V
Current - Collector (ic) (max)
4A
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Gain
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
LZ1418E100R,114
Manufacturer:
FUJITSU
Quantity:
562
Product specification
Supersedes data of June 1992
DATA SHEET
LZ1418E100R
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 18

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LZ1418E100R,114 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 ...

Page 2

Philips Semiconductors NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance ...

Page 3

Philips Semiconductors NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CER V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC) ...

Page 4

Philips Semiconductors NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to mounting-base th j-mb R thermal resistance from mounting-base to heatsink th mb-h Note 1. See “Mounting recommendations in the General part of handbook SC19a”. ...

Page 5

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth ferrite bead 0.65 input 50 100 pF ATC Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: = 10. r Fig.4 Wideband test circuit board for 1.4 to1.8 GHz, ...

Page 6

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0 (regulated Fig.7 Input and load impedances as functions of frequency; typical ...

Page 7

Philips Semiconductors NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 0.1 3.5 2.9 X 3.4 3.2 Dimensions in mm. Torque on nut: Max. 0.5 Nm. Recommended screw: M3. 1997 Feb 18 24 max 0 seating plane Y ...

Page 8

Philips Semiconductors NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

Page 9

Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 9 Product specification LZ1418E100R ...

Page 10

Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 10 Product specification LZ1418E100R ...

Page 11

Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 11 Product specification LZ1418E100R ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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