PZ1418B30U,114 NXP Semiconductors, PZ1418B30U,114 Datasheet

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PZ1418B30U,114

Manufacturer Part Number
PZ1418B30U,114
Description
TRANS SOT443A
Manufacturer
NXP Semiconductors
Datasheet
1.PZ1418B30U114.pdf (12 pages)

Specifications of PZ1418B30U,114

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.6GHz
Power - Max
45W
Current - Collector (ic) (max)
4A
Mounting Type
Flange
Package / Case
SOT-443A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Gain
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Product specification
Supersedes data of 1997 Feb 19
andbook, halfpage
DATA SHEET
PZ1418B30U
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
M3D034
1997 Nov 13

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PZ1418B30U,114 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage PZ1418B30U NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 M3D034 1997 Nov 13 ...

Page 2

Philips Semiconductors NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance ...

Page 3

Philips Semiconductors NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC) ...

Page 4

Philips Semiconductors NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to mounting-base th j-mb R thermal resistance from mounting-base to heatsink th mb-h Note 1. See “ Mounting recommendations in the General part of handbook ...

Page 5

Philips Semiconductors NPN microwave power transistor 40 handbook, halfpage Class-B operation (1) 1.4 GHz. (2) 1.6 GHz. (3) 1.8 GHz. Fig.4 Load power ...

Page 6

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth Fig.6 Input impedance as a function of frequency; typical values. handbook, full pagewidth Fig.7 Optimum ...

Page 7

Philips Semiconductors NPN microwave power transistor PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 6.33 3.21 ...

Page 8

Philips Semiconductors NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

Page 9

Philips Semiconductors NPN microwave power transistor 1997 Nov 13 NOTES 9 Product specification PZ1418B30U ...

Page 10

Philips Semiconductors NPN microwave power transistor 1997 Nov 13 NOTES 10 Product specification PZ1418B30U ...

Page 11

Philips Semiconductors NPN microwave power transistor 1997 Nov 13 NOTES 11 Product specification PZ1418B30U ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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