NX3L1G3157GW,125 NXP Semiconductors, NX3L1G3157GW,125 Datasheet - Page 13

IC ANALOG SWITCH SPDT SOT363

NX3L1G3157GW,125

Manufacturer Part Number
NX3L1G3157GW,125
Description
IC ANALOG SWITCH SPDT SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NX3L1G3157GW,125

Number Of Switches
1
Switch Configuration
SPDT
On Resistance (max)
4.1 Ohms
On Time (max)
52 ns
Off Time (max)
30 ns
Off Isolation (typ)
- 90 dB
Supply Voltage (max)
4.3 V
Supply Voltage (min)
1.4 V
Supply Current
690 nA, 800 nA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SC-88
Minimum Operating Temperature
- 40 C
Off State Leakage Current (max)
+/- 500 nA
Operating Frequency
60 MHz
Power Dissipation
250 mW
Switch Current (typ)
+/- 350 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5539-2
NXP Semiconductors
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
specified); t
[1]
NX3L1G3157_8
Product data sheet
Symbol Parameter
THD
f
α
V
Q
(−3dB)
Fig 18. Test circuit for measuring total harmonic distortion
iso
ct
inj
f
i
is biased at 0.5V
total harmonic
distortion
−3 dB frequency
response
isolation (OFF-state)
crosstalk voltage
charge injection
r
Additional dynamic characteristics
= t
f
12.2 Additional dynamic characteristics
12.3 Test circuits
2.5 ns; T
CC
.
amb
V
IL
= 25
or V
IH
Conditions
f
R
f
between digital inputs and switch;
f
f
R
°
i
i
i
i
C.
= 20 Hz to 20 kHz; R
L
= 100 kHz; R
= 1 MHz; C
= 1 MHz; C
gen
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 50 Ω; see
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
f i
= 0 Ω; see
= 1.4 V; V
= 1.65 V; V
= 2.3 V; V
= 2.7 V; V
= 4.3 V; V
= 1.4 V to 4.3 V
= 1.4 V to 4.3 V
= 1.4 V to 3.6 V
= 3.6 V to 4.3 V
= 1.5 V
= 1.8 V
= 2.5 V
= 3.3 V
= 4.3 V
All information provided in this document is subject to legal disclaimers.
L
L
S
Z
= 50 pF; R
= 0.1 nF; R
L
Rev. 08 — 26 April 2010
Figure 19
Figure 22
= 50 Ω; see
I
I
I
I
V
= 1 V (p-p)
= 1.5 V (p-p)
= 2 V (p-p)
= 2 V (p-p)
I
CC
= 1.2 V (p-p)
GND
Y0
Y1
L
= 32 Ω; see
L
1
2
L
= 50 Ω; see
= 1 MΩ; V
Low-ohmic single-pole double-throw analog switch
switch
Figure 20
0.5V
CC
Figure 18
R L
gen
Figure 21
= 0 V;
D
switch
1
2
001aag573
I
= GND or V
V
[1]
[1]
[1]
V
S
IH
IL
NX3L1G3157
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CC
Typ
0.15
0.10
0.02
0.02
0.02
© NXP B.V. 2010. All rights reserved.
−90
0.2
0.3
60
15
(unless otherwise
3
4
6
9
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13 of 22
Unit
MHz
pC
pC
pC
pC
pC
dB
%
%
%
%
%
V
V

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